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まず  ページブログMMBT3906 Features, Dimensions, and Specifications Simplified
11/20/2024で公開されています 42

MMBT3906 Features, Dimensions, and Specifications Simplified

The MMBT3906 is a versatile transistor widely used in electronics for amplification and switching tasks. This article will guide you through its features, specifications, and applications, making it easier to understand its role in various designs. Let’s dive into what makes this transistor a reliable choice for your projects.

Catalog

1. Typical Characteristics of MMBT3906
2. MMBT3906 CAD Model
3. Physical Dimensions of MMBT3906
4. Thermal Characteristics and Derating Information for MMBT3906
5. MMBT3906 Specifications
6. Features of MMBT3906
7. Logic Symbols of MMBT3906
8. Manufacturer Information for MMBT3906
9. Parts with Similar Specifications to MMBT3906

MMBT3906

Typical Characteristics of MMBT3906

[IMAGE OF MMBT3906 Typical Characteristics]

MMBT3906 CAD Model

MMBT3906 Symbol

[IMAGE OF MMBT3906 Symbol]

MMBT3906 Footprint

[IMAGE OF MMBT3906 Footprint]

MMBT3906 3D Model

[IMAGE OF MMBT3906 3D Model]

Physical Dimensions of MMBT3906

[IMAGE OF MMBT3906 Physical Dimensions]

Thermal Characteristics and Derating Information for MMBT3906

[IMAGE OF MMBT3906 Thermal Characteristics and Derating Information]

MMBT3906 Specifications

Technical specifications, features, characteristics, and components with comparable specifications of ON Semiconductor MMBT3906.

[TABLE OF MMBT3906 Specifications]

Features of MMBT3906

Epitaxial Planar Die Construction

This feature ensures the MMBT3906 provides stable and reliable performance. The epitaxial planar construction enhances its ability to handle medium power applications effectively, making it a dependable choice for various circuits.

Ideal for Medium Power Amplification and Switching

The MMBT3906 is designed for tasks that require medium power handling, such as amplifying signals and switching operations. Its performance in these applications ensures that it meets the needs of common electronic designs.

Complementary NPN Type: MMBT3904

The MMBT3906 pairs seamlessly with the MMBT3904, which is its complementary NPN transistor. This pairing enables efficient design in circuits where both PNP and NPN transistors are needed for balanced functionality.

Totally Lead-Free and Fully RoHS Compliant

This transistor is manufactured without lead, making it a safer and more environmentally friendly choice. Its compliance with RoHS standards ensures it adheres to strict environmental regulations for hazardous substances.

Halogen and Antimony Free: A “Green” Device

The MMBT3906 is classified as a "green" device, free from halogens and antimony. This makes it a suitable option for eco-conscious designs and applications that prioritize sustainable materials.

Qualified to AEC-Q101 Standards for High Reliability

The AEC-Q101 qualification highlights the high reliability of the MMBT3906. This certification ensures it performs well under demanding conditions, making it suitable for automotive and industrial applications.

PPAP Capable

The MMBT3906 supports the Production Part Approval Process (PPAP), which is vital for meeting the quality standards of automotive and other high-reliability sectors. This ensures a smooth integration into projects requiring stringent quality approvals.

Logic Symbols of MMBT3906

[IMAGE OF MMBT3906 Logic Symbols]

Manufacturer Information for MMBT3906

ON Semiconductor, known by its Nasdaq ticker ON, leads in developing energy-efficient technologies. Their solutions are designed to help customers lower energy consumption globally. The company provides a wide range of power and signal management products, as well as logic, discrete, and custom components tailored to different industries.

These products are crafted to meet the needs of sectors like automotive, communications, consumer electronics, industrial equipment, LED lighting, and more. ON Semiconductor supports engineers in creating reliable designs for applications in computing, medical devices, aerospace, military, and power supply systems.

Their commitment to quality is evident in their robust supply chain and manufacturing capabilities. They operate state-of-the-art facilities, supported by a network of sales offices and design centers spread across key regions, including North America, Europe, and Asia-Pacific. This global presence ensures reliable support for design challenges and project requirements.

Parts with Similar Specifications to MMBT3906

The parts on the right have specifications similar to the ON Semiconductor MMBT3906.

[TABLE OF Parts with Similar Specs]

Frequently Asked Questions [FAQ]

1. What is the maximum collector current for the MMBT3906?

The MMBT3906 can handle a maximum collector current of -200mA. This means it can manage current flow up to this level when connected in a circuit, making it suitable for medium-power tasks.

2. What are the typical uses of the MMBT3906?

The MMBT3906 is commonly used in circuits for amplifying signals and performing switching operations. It is designed for tasks where medium power handling is required, ensuring reliable performance in these applications.

3. What is the breakdown voltage of the collector-emitter junction?

The collector-emitter breakdown voltage of the MMBT3906 is 40V. This value indicates the highest voltage the transistor can handle between its collector and emitter without breaking down or becoming damaged.

4. Is the MMBT3906 compliant with RoHS standards?

Yes, the MMBT3906 fully complies with RoHS standards. This ensures the transistor is made without hazardous substances, making it safer for use in environmentally conscious projects.

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一般的な問題 [FAQ]

1. What is the maximum collector current for the MMBT3906?

The MMBT3906 can handle a maximum collector current of -200mA. This means it can manage current flow up to this level when connected in a circuit, making it suitable for medium-power tasks.

2. What are the typical uses of the MMBT3906?

The MMBT3906 is commonly used in circuits for amplifying signals and performing switching operations. It is designed for tasks where medium power handling is required, ensuring reliable performance in these applications.

3. What is the breakdown voltage of the collector-emitter junction?

The collector-emitter breakdown voltage of the MMBT3906 is 40V. This value indicates the highest voltage the transistor can handle between its collector and emitter without breaking down or becoming damaged.

4. Is the MMBT3906 compliant with RoHS standards?

Yes, the MMBT3906 fully complies with RoHS standards. This ensures the transistor is made without hazardous substances, making it safer for use in environmentally conscious projects.

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